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W06 Cross-stack Explorations of Ferroelectric-based Logic and Memory Solutions for At-Scale Compute Workloads

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General Co-Chair
Ian O'Connor, École Centrale de Lyon, France
General Co-Chair
Stefan Slesazeck, NaMLab, Germany
Programme Co-Chair
Michael Niemier, University of Notre Dame, United States
Programme Co-Chair
Xunzhao Yin, Zhejiang University, China

 

This workshop will speak to research with respect to ferroelectrics at all levels of the design stack.

  • It will begin by discussing ferroelectric device concepts (e.g., front end of line (FEOL) and back end of line (BEOL) ferroelectric field effect transistors (FeFETs), ferro-based NAND, FeRAM, etc. as well as modeling efforts).
  • Talks will effectively consider ferroelectrics from the “bottom-up” by addressing (a) how materials-based design-levers may influence device behavior (i.e., how might we optimize a device for a figure of merit that most benefits an application-level workload) and (b) new research in AI-guided materials discovery.
  • Subsequently, talks will consider the use of ferroelectric devices in novel circuits and/or memory architectures (e.g., associative memories, crossbar-based structures, and ferroelectric solutions where computation is done via charge sharing).
  • Novel algorithmic solutions based on ferroelectric devices, as well as how one might develop compiler support for technology-enabled, IMC solutions will also be discussed.

This workshop will include a submission-based poster-session to maximize engagement from the DATE community.  

Submissions may be made at:  https://easychair.org/conferences/?conf=ferrodate25

  • Extended abstract submission: 31 January 2025
  • Notification of acceptance: 14 February 2025
  • Final version of the extended abstract: 21 March 2025

Ferroelectric Device Concepts, Modeling, and Materials

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Session End
Session chair
Michael Niemier, University of Notre Dame, United States

This session begins with discussions of various ferroelectric device concepts including front-end-of-line (FEOL) and back-end-of-line (BEOL) ferroelectric field effect transistors (FeFET), ferro-based NAND memory, ferroelectric random access memory (FeRAM), and ferroelectric tunneling junctions (FTJs).  Modeling efforts, as well as how artificial intelligence might be used for material science-based design space explorations will also be discussed.

Presentations

Ferro-based NAND

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Speaker
Asif Khan, Georgia Institute of Technology, United States

FeRAM

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Speaker
Laurent Grenouillet, CEA-Leti, France

Prospects of Ferroelectric Tunneling Junctions

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Speaker
Stefan Slesazeck, NaMLab, Germany

Ferroelectric Device Modeling

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Speaker
Hussam Amrouch, Technical University Munich, Germany

AI Guided Materials Discovery

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Speaker
Christopher Hinkle, University of Notre Dame, United States

Poster Session

Session Start
Session End
Posters Chair
Ian O'Connor, École Centrale de Lyon, France

Architectures, Applications, and Compilation Techniques for Ferroelectric Devices

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Session End
Session chair
Xunzhao Yin, Zhejiang University, China

This session begins by considering in-memory computing (IMC) solutions based on ferroelectric device concepts.  Recent work with respect to ferroelectric content addressable memories, crossbar arrays, as well as charge sharing architectures (that can also perform associative memory and MAC operations) will all be discussed.  The session concludes with a discussion of recent work relating to compilation techniques and higher-level programming abstractions for ferroelectric IMC solutions.

Presentations

Ferroelectric Solutions for Content Addressable Memories

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Speaker
Xunzhao Yin, Zhejiang University, China

Charge Sharing Architectures with Ferroelectric Devices

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Speaker
Thomas Kämpfe, Fraunhofer IPMS, Germany

Compiler Support for Ferroelectric-Based IMC Solutions

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Speaker
Jeronimo Castrillon, TU Dresden, Germany